Scientists make memory breakthrough with revolutionary field effect transistors (FET) | Digit

Scientists from the North Carolina State University have developed what has been considered the holy-grail of computer storage and memory – ‘universal’ memory that both serves as dynamic random access memory and flash storage. Using double floating-gate field effect transistors, the NCSU team’s prototypic effort will allow memory to switch between static and dynamic modes in a single cycle – without the data getting lost in between. This is due to the second floating gate, which apart from holding bits in a ready to be read state, will also enable…